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Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Detailed Information
- 자료유형
- 기사
- ISSN
- 12297607
- 서명/저자
- Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology / Bong-Kyu Joung, Jeong-Won Kang, Ho-Jung Hwang, Sang-Yong Kim, Oh-Keun Kwon
- 발행사항
- 서울 : 한국전기전자재료학회, 2007.
- 형태사항
- pp. 1-6
- 키워드
- TRADEOFF CHARACTERISTIC GATE LENGTH MARGIN HOT CARRIER LIFETIME CONSIDERING ESD NMOSFETS SUBMICRON TECHNOLOGY
- 기타저자
- Bong-Kyu Joung
- 기타저자
- Jeong-Won Kang
- 기타저자
- Ho-Jung Hwang
- 기타저자
- Sang-Yong Kim
- 기타저자
- Oh-Keun Kwon
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60076030
MARC
008060518s2007 ULKa a ENG■022 ▼a12297607
■245 ▼aTrade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology▼dBong-Kyu Joung, Jeong-Won Kang, Ho-Jung Hwang, Sang-Yong Kim, Oh-Keun Kwon
■260 ▼a서울▼b한국전기전자재료학회▼c2007.
■300 ▼app. 1-6
■653 ▼aTRADEOFF▼aCHARACTERISTIC▼aGATE▼aLENGTH▼aMARGIN▼aHOT▼aCARRIER▼aLIFETIME▼aCONSIDERING▼aESD▼aNMOSFETS▼aSUBMICRON▼aTECHNOLOGY
■700 ▼aBong-Kyu Joung
■7001 ▼aJeong-Won Kang
■7001 ▼aHo-Jung Hwang
■7001 ▼aSang-Yong Kim
■7001 ▼aOh-Keun Kwon
■773 ▼tTransactions on Electrical and Electronic Materials▼gVol.7, No.1 (2006 February)▼d2007, 02
■URL ▼ahttp://www.kieeme.or.kr
■SIS ▼aS025127▼b60055341▼h8▼s2
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