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Characterization and Design Consideration of 80-nm Self-Aligned N-/P-Channel I-MOS Devices
Characterization and Design Consideration of 80-nm Self-Aligned N-/P-Channel I-MOS Devices
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MARC
008060427s2006 ULKa a ENG■022 ▼a15981657
■245 ▼aCharacterization and Design Consideration of 80-nm Self-Aligned N-/P-Channel I-MOS Devices▼dWoo Young Choi, Jong Duk Lee, Byung Gook Park
■260 ▼a서울▼b대한전자공학회▼c2006.
■300 ▼app. 43-51
■653 ▼aCHARACTERIZATION▼aDESIGN▼aCONSIDERATION▼a80NM▼aSELFALIGNED▼aNPCHANNEL▼aIMOS▼aDEVICES
■700 ▼aWoo Young Choi, Jong Duk Lee, Byung Gook Park
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 6, Number 1, (2006 March)▼d2006, 03
■URL ▼ahttp://www.jsts.org
■SIS ▼aS021050▼b60054120▼h8▼s2
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