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Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 서명/저자
- Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process / Won Ju Cho
- 발행사항
- 서울 : 대한전자공학회, 2006.
- 형태사항
- pp. 16-21
- 기타저자
- Won Ju Cho
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60074869
MARC
008060427s2006 ULKa a ENG■022 ▼a15981657
■245 ▼aFabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process▼dWon Ju Cho
■260 ▼a서울▼b대한전자공학회▼c2006.
■300 ▼app. 16-21
■653 ▼aFABRICATION▼aPTYPE▼aFINFETS▼a20NM▼aGATE▼aLENGTH▼aUSING▼aBORON▼aSOLID▼aPHASE▼aDIFFUSION▼aPROCESS
■700 ▼aWon Ju Cho
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 6, Number 1, (2006 March)▼d2006, 03
■URL ▼ahttp://www.jsts.org
■SIS ▼aS021050▼b60054120▼h8▼s2
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