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NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices
NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices / Seonghoo...
NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices

Detailed Information

자료유형  
 기사
ISSN  
15981657
서명/저자  
NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices / Seonghoon Jin, Chan Hyeong Park, In-Young Chung, Young June Park, Hong Shick Min
발행사항  
서울 : 대한전자공학회, 2006.
형태사항  
pp. 1-9
키워드  
NANOCAD FRAMEWORK SIMULATION QUANTUM EFFECTS NANOSCALE MOSFET DEVICES
기타저자  
Seonghoon Jin, Chan Hyeong Park, In-Young Chung, Young June Park, Hong Shick Min
기본자료저록  
Journal of Semiconductor Technology and Science : Volume 6, Number 1, (2006 March) 2006, 03
URL  
http://www.ieek.or.kr
모체레코드  
모체정보확인
Control Number  
kjul:60074865

MARC

 008060427s2006        ULKa    a                          ENG
■022    ▼a15981657
■245    ▼aNANOCAD  Framework  for  Simulation  of  Quantum  Effects  in  Nanoscale  MOSFET  Devices▼dSeonghoon  Jin,  Chan  Hyeong  Park,  In-Young  Chung,  Young  June  Park,  Hong  Shick  Min
■260    ▼a서울▼b대한전자공학회▼c2006.
■300    ▼app.  1-9
■653    ▼aNANOCAD▼aFRAMEWORK▼aSIMULATION▼aQUANTUM▼aEFFECTS▼aNANOSCALE▼aMOSFET▼aDEVICES
■700    ▼aSeonghoon  Jin,  Chan  Hyeong  Park,  In-Young  Chung,  Young  June  Park,  Hong  Shick  Min
■773    ▼tJournal  of  Semiconductor  Technology  and  Science▼gVolume  6,  Number  1,  (2006  March)▼d2006,  03
■URL    ▼ahttp://www.ieek.or.kr
■SIS    ▼aS021050▼b60054120▼h8▼s2

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