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Structural and Optical Characterization of Thick GaN Films Grown by the Direct Reaction of Metal Ga and NH₃in CVD Reactor
Structural and Optical Characterization of Thick GaN Films Grown by the Direct Reaction of Metal Ga and NH₃in CVD Reactor
Detailed Information
- 자료유형
- 기사
- ISSN
- 02561115
- 서명/저자
- Structural and Optical Characterization of Thick GaN Films Grown by the Direct Reaction of Metal Ga and NH₃in CVD Reactor / Kee Suk Nahm, Seung Hyun Yang, Sang Hyung Ahn
- 발행사항
- 서울 : 한국화학공학회, 2000.
- 형태사항
- pp. 105-110
- 키워드
- STRUCTURAL OPTICAL CHARACTERIZATION THICK GAN FILMS GROWN DIRECT REACTION METAL NH₃IN CVD REACTOR
- 기본자료저록
- The KOREAN International Journal of Chemical Engineering : Vol. 17 No. 1 (2000 January) 2000, 01
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60069712
MARC
008060210s2000 ULKa a ENG■022 ▼a02561115
■245 ▼aStructural and Optical Characterization of Thick GaN Films Grown by the Direct Reaction of Metal Ga and NH₃in CVD Reactor▼dKee Suk Nahm, Seung Hyun Yang, Sang Hyung Ahn
■260 ▼a서울▼b한국화학공학회▼c2000.
■300 ▼app. 105-110
■653 ▼aSTRUCTURAL▼aOPTICAL▼aCHARACTERIZATION▼aTHICK▼aGAN▼aFILMS▼aGROWN▼aDIRECT▼aREACTION▼aMETAL▼aNH₃IN▼aCVD▼aREACTOR
■700 ▼aKee Suk Nahm, Seung Hyun Yang, Sang Hyung Ahn
■773 ▼tThe KOREAN International Journal of Chemical Engineering▼gVol. 17 No. 1 (2000 January)▼d2000, 01
■SIS ▼aS018097▼b60066239▼h8▼s2
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