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Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System
Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System
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MARC
008050913s2004 ULKa a ENG■022 ▼a12259438
■245 ▼aGrowth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System▼d공저 Wentao Huang, Changchun Chen, Xiyou Li
■260 ▼a서울▼b대한금속.재료학회▼c2004.
■300 ▼app. 435-438
■653 ▼aGROWTH▼aSIGE▼aFILM▼aUSING▼aSINGLEWAFER▼aRAPID▼aTHERMAL▼aPROCESSING▼aUHVCVD▼aSYSTEM
■700 ▼aWentao Huang, Changchun Chen, Xiyou Li
■773 ▼tMetals and Materials▼gVOL.10 NO.5 (2004 OCTOBER)▼d2004, 10
■SIS ▼aS010856▼b60013551▼h1▼s2▼fP
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