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Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System
Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System / 공저...
Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System

Detailed Information

자료유형  
 기사
ISSN  
12259438
서명/저자  
Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System / 공저 Wentao Huang, Changchun Chen, Xiyou Li
발행사항  
서울 : 대한금속.재료학회, 2004.
형태사항  
pp. 435-438
키워드  
GROWTH SIGE FILM USING SINGLEWAFER RAPID THERMAL PROCESSING UHVCVD SYSTEM
기타저자  
Wentao Huang, Changchun Chen, Xiyou Li
기본자료저록  
Metals and Materials : VOL.10 NO.5 (2004 OCTOBER) 2004, 10
모체레코드  
모체정보확인
Control Number  
kjul:60055279

MARC

 008050913s2004        ULKa    a                          ENG
■022    ▼a12259438
■245    ▼aGrowth  of  SiGe  Film  By  Using  A  Single-wafer  Rapid  Thermal  Processing  UHV/CVD  System▼d공저  Wentao  Huang,  Changchun  Chen,  Xiyou  Li
■260    ▼a서울▼b대한금속.재료학회▼c2004.
■300    ▼app.  435-438
■653    ▼aGROWTH▼aSIGE▼aFILM▼aUSING▼aSINGLEWAFER▼aRAPID▼aTHERMAL▼aPROCESSING▼aUHVCVD▼aSYSTEM
■700    ▼aWentao  Huang,  Changchun  Chen,  Xiyou  Li
■773    ▼tMetals  and  Materials▼gVOL.10  NO.5  (2004  OCTOBER)▼d2004,  10
■SIS    ▼aS010856▼b60013551▼h1▼s2▼fP

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