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A Study on the Reactive Ion Etching of SiC Single Crystals Using Inductively Couplde Plasma of SF-Based Gas Mixtures
A Study on the Reactive Ion Etching of SiC Single Crystals Using Inductively Couplde Plasma of SF-Based Gas Mixtures
Detailed Information
- 자료유형
- 기사
- ISSN
- 12259438
- 서명/저자
- A Study on the Reactive Ion Etching of SiC Single Crystals Using Inductively Couplde Plasma of SF-Based Gas Mixtures / 공저 S. C. Ahn, S. Y. Han, J. L. Lee, J. H. Moon, and B. T. Lee
- 발행사항
- 서울 : 대한금속.재료학회, 2004.
- 형태사항
- pp. 103
- 키워드
- STUDY REACTIVE ION ETCHING SIC SINGLE CRYSTALS USING INDUCTIVELY COUPLDE PLASMA SFBASED GAS MIXTURES
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60046365
MARC
008050728s2004 ULKa a ENG■022 ▼a12259438
■245 ▼aA Study on the Reactive Ion Etching of SiC Single Crystals Using Inductively Couplde Plasma of SF-Based Gas Mixtures▼d공저 S. C. Ahn, S. Y. Han, J. L. Lee, J. H. Moon, and B. T. Lee
■260 ▼a서울▼b대한금속.재료학회▼c2004.
■300 ▼app. 103
■653 ▼aSTUDY▼aREACTIVE▼aION▼aETCHING▼aSIC▼aSINGLE▼aCRYSTALS▼aUSING▼aINDUCTIVELY▼aCOUPLDE▼aPLASMA▼aSFBASED▼aGAS▼aMIXTURES
■700 ▼aS. C. Ahn, S. Y. Han, J. L. Lee, J. H. Moon, and B. T. Lee
■773 ▼tMetals and Materials▼gVOL.10 NO.1 (2004 FEBRUARY)▼d2004, 02
■SIS ▼aS010564▼b60013551▼h8▼s2
