MARC

 008050714s2001        ULKa    a                          KOR
■022    ▼a12296368
■245    ▼aULSI급  CMOS  소자  특성을  위한  몬테  카를로  이온  주입  공정  시뮬레이션시의  효율적인  가상  이온  발생법▼d손명식,  이진구  공저
■260    ▼a서울▼b대한전자공학회▼c2001.
■300    ▼app.  7-16
■653    ▼aULSI급▼aCMOS▼a소자▼a특성▼a위한▼a이온▼a주입▼a공정▼a시뮬레이션▼a시의▼a효율▼a적인▼a가상▼a발생
■700    ▼a손명식,  이진구
■773    ▼t전자공학회논문지SD(Semiconductor  and  Devices)  :  반도체▼g제38권  제11호  (2001  11)▼d2001,  11
■SIS    ▼aS009634▼b60014354▼h8▼s2

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