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Fabrication of SOI Structures with Buried Cavities Using Si Wafer Direct Bonding and Electrochemical Etch-stop
Fabrication of SOI Structures with Buried Cavities Using Si Wafer Direct Bonding and Electrochemical Etch-stop
Detailed Information
- 자료유형
- 기사
- ISSN
- 12259438
- 서명/저자
- Fabrication of SOI Structures with Buried Cavities Using Si Wafer Direct Bonding and Electrochemical Etch-stop / Gwiy-Sang Chung
- 발행사항
- 서울 : 대한금속.재료학회, 2003.
- 형태사항
- pp. 503-506
- 기타저자
- Gwiy-Sang Chung
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60027175
MARC
008031022s2003 ULKa a ENG■022 ▼a12259438
■245 ▼aFabrication of SOI Structures with Buried Cavities Using Si Wafer Direct Bonding and Electrochemical Etch-stop▼dGwiy-Sang Chung
■260 ▼a서울▼b대한금속.재료학회▼c2003.
■300 ▼app. 503-506
■653 ▼aFABRICATION▼aSOI▼aSTRUCTURES▼aBURIED▼aCAVITIES▼aUSING▼aWAFER▼aDIRECT▼aBONDING▼aELECTROCHEMICAL▼aETCHSTOP
■700 ▼aGwiy-Sang Chung
■773 ▼tMetals and Materials▼gVOL.9 NO.5 (2003 OCTOBER)▼d2003, 10
■SIS ▼aS010463▼b60013551▼h8▼s2
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