MARC

 008030716s2000        ULKa    a                          KOR
■022    ▼a02533847
■245    ▼aAlGaAs/InGaAs  p-HEMT  소자에서  내부  전자  트랩과  표면  결함이  전달컨덕턴스  분산  및  게이트  누설전류  특성에  미치는  영향▼d최경진,  이종람  공저
■260    ▼a서울▼b대한금속.재료학회▼c2000.
■300    ▼app.  1118-1125
■653    ▼aALGAASINGAAS▼aPHEMT▼a소자▼a에서▼a표면▼a결함▼a전달▼a분산▼a게이트▼a누설▼a전류▼a특성
■700    ▼a최경진,  이종람
■773    ▼t대한금속.재료학회지▼gVol.38  No.8  2000▼d2000,  08
■SIS    ▼aS009117▼b60013425▼h8▼s2

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