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Schottky Barrier MOSFEETs with High Current Drivability for Nano-regime Applications
Schottky Barrier MOSFEETs with High Current Drivability for Nano-regime Applications
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 서명/저자
- Schottky Barrier MOSFEETs with High Current Drivability for Nano-regime Applications / Moongyu Jang, Yarkyeon Kim, Myungsim Jun, Cheljong Choi, Taeyoub Kim, Byounchul Park, Seongjae Lee
- 발행사항
- 서울 : 대한전자공학회, 2006.
- 형태사항
- pp. 10-15
- 기타저자
- Moongyu Jang, Yarkyeon Kim, Myungsim Jun, Cheljong Choi, Taeyoub Kim, Byounchul Park, Seongjae Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60074867
MARC
008060427s2006 ULKa a ENG■022 ▼a15981657
■245 ▼aSchottky Barrier MOSFEETs with High Current Drivability for Nano-regime Applications▼dMoongyu Jang, Yarkyeon Kim, Myungsim Jun, Cheljong Choi, Taeyoub Kim, Byounchul Park, Seongjae Lee
■260 ▼a서울▼b대한전자공학회▼c2006.
■300 ▼app. 10-15
■653 ▼aSCHOTTKY▼aBARRIER▼aMOSFEETS▼aHIGH▼aCURRENT▼aDRIVABILITY▼aNANOREGIME▼aAPPLICATIONS
■700 ▼aMoongyu Jang, Yarkyeon Kim, Myungsim Jun, Cheljong Choi, Taeyoub Kim, Byounchul Park, Seongjae Lee
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 6, Number 1, (2006 March)▼d2006, 03
■URL ▼ahttp://www.ieek.or.kr
■SIS ▼aS021050▼b60054120▼h8▼s2
