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High Quality Partially Relaxed SiGe Film Grown on Silicon-on-Insulator Substrate by Ultra-High Vacuum Chemical Vapor Deposition
High Quality Partially Relaxed SiGe Film Grown on Silicon-on-Insulator Substrate by Ultra-High Vacuum Chemical Vapor Deposition
Detailed Information
- Material Type
- 기사
- ISSN
- 12259438
- Title/Author
- High Quality Partially Relaxed SiGe Film Grown on Silicon-on-Insulator Substrate by Ultra-High Vacuum Chemical Vapor Deposition / 공저 Changchun Chen, Wentao Huang, Zhihiog Liu
- Publish Info
- 서울 : 대한금속.재료학회, 2004.
- Material Info
- pp. 281-284
- Index Term-Uncontrolled
- HIGH QUALITY PARTIALLY RELAXED SIGE FILM GROWN SILICONONINSULATOR SUBSTRATE ULTRAHIGH VAPOR DEPOSITION
- Added Entry-Personal Name
- Changchun Chen, Wentao Huang, Zhihiog Liu
- Host Item Entry
- Metals and Materials : VOL.10 NO.3 (2004 JUNE) 2004, 06
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60046295
MARC
008050728s2004 ULKa a ENG■022 ▼a12259438
■245 ▼aHigh Quality Partially Relaxed SiGe Film Grown on Silicon-on-Insulator Substrate by Ultra-High Vacuum Chemical Vapor Deposition▼d공저 Changchun Chen, Wentao Huang, Zhihiog Liu
■260 ▼a서울▼b대한금속.재료학회▼c2004.
■300 ▼app. 281-284
■653 ▼aHIGH▼aQUALITY▼aPARTIALLY▼aRELAXED▼aSIGE▼aFILM▼aGROWN▼aSILICONONINSULATOR▼aSUBSTRATE▼aULTRAHIGH▼aVAPOR▼aDEPOSITION
■700 ▼aChangchun Chen, Wentao Huang, Zhihiog Liu
■773 ▼tMetals and Materials▼gVOL.10 NO.3 (2004 JUNE)▼d2004, 06
■SIS ▼aS010721▼b60013551▼h8▼s2
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